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Volumn 23, Issue 1, 2009, Pages 76-79
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Electrically stable low voltage operating ZnO thin film transistors with low leakage current Ni-doped Ba0.6Sr0.4TiO3 gate insulator
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b
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Author keywords
Gate insulator; Low voltage operation; Transistor; ZnO
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Indexed keywords
BST FILM;
FIELD-EFFECT MOBILITIES;
GATE INSULATOR;
LOW OPERATING VOLTAGE;
LOW VOLTAGE OPERATION;
LOW VOLTAGES;
LOW-LEAKAGE CURRENT;
LOW-VOLTAGE;
NI-DOPED;
ON/OFF RATIO;
RF-MAGNETRON SPUTTERING;
ROOM TEMPERATURE;
SUBTHRESHOLD SWING;
TIO;
ZNO;
ZNO THIN FILM;
BARIUM;
MAGNETRON SPUTTERING;
NICKEL;
SEMICONDUCTING ORGANIC COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
THIN FILM TRANSISTORS;
ZINC OXIDE;
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EID: 71449098250
PISSN: 13853449
EISSN: 15738663
Source Type: Journal
DOI: 10.1007/s10832-008-9538-7 Document Type: Article |
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Times cited : (8)
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References (15)
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