XAS studies of chemical bonding of nitrogen and oxygen atoms in Ti/Zr/Hf high-K gate dielectrics

AIP Conference Proceedings

Volumn 882, Issue , 2007, Pages 487-489

  Seo, Hyungtak ^a   Lee, Sanghyun ^a   Ju, Byoung ^a   Lucovsky, Gerald ^a   Lüning, Jan ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Near edge absorption spectroscopy; Remote plasma enhanced chemical vapor deposition; Spectroscopic ellipsometry; Transition metal dielectrics; Transition metal Si oxynitrides; Transition metal silicates

Indexed keywords

EID: 33947417221     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2644567     Document Type: Conference Paper

References (5)

1. G. Lucovsky G and J. Lüning, Proceedings of ESSDERC 2005 Grenoble France 439-444 (2005).
2. G. Lucovsky, et. al. IEEE Trans. Dev. Mat. Reliability 5, 65-84 (2005).
3. S.V. Hattangady, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. 66, 3495-7 (1995).
4. B. Ju, "Properties of Zr-Si Oxynitride Dielectric Alloys" PhD. Thesis, NC State University, 2000.
5. F.A. Cotton, Chemical Applications of Group Theory, New York, Wiley Interscience, 1963, Chap. 9.