Effects of donor and acceptor dopants on schottky barrier heights and vacancy concentrations in barium strontium titanate

Journal of the European Ceramic Society

Volumn 21, Issue 10-11, 2001, Pages 1633-1636

  Dawber, Matthew ^a   Scott, J F ^a   Hartmann, A J ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

BaTiO3 and titanates; Electrical conductivity; Electrical properties

Indexed keywords

BARIUM COMPOUNDS; CERAMIC MATERIALS; OXYGEN; X RAY PHOTOELECTRON SPECTROSCOPY;

DOPANTS;

THIN FILMS;

CERAMICS;

EID: 0034889496     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0955-2219(01)00081-4     Document Type: Article

References (29)

1. Use of ferroelectric hysteresis parameters for evaluation of niobium effect in sol-gel derived PZT thin films
2. Effect of Nb-doping on the hysteresis parameters of sol-gel PZT thin films
3. Effect of dopants on the crystallisation mechanism of PZT thin films
4. Effect of Nb doping on the microstructure of sol-gel derived PZT thin films
5. 3 thin films
6. 3 dielectric ceramic thin films
7. Correlations among degradations in lead zirconate titanate thin film capacitors
8. The influence of dopants on the leakage current in PZT thin-film ferroelectric capacitors
9. Polarization, conduction and breakdown in non-ferroelectric perovskite thin films
10. Theory of conduction and breakdown in perovskite thin films
11. Influence of precursor chemistry on the formation of MTiO/sub 3/ (M = Ba, Sr) ceramic thin films
12. Control of the morphology of CSD-prepared (Ba, Sr)TiO/sub 3/ thin films
13. 3 thin films
14. A model for fatigue in ferroelectric perovskite thin films
15. Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics
16. Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
17. 3 thin films
18. The electronic conduction mechanism in barium strontium titanate thin films
19. The physics of ferroelectric ceramic thin films for memory applications
20. 3-5 with R = Y, La, and Nd
21. 3
22. 3 by high resolution X-ray absorption spectroscopy
23. Process dependent electrical characteristics and equivalent circuit model of sol-gel based PZT capacitors