Replacement metal-gate NMOSFETs with ALD TaN/EP-Cu, PVD Ta, and PVD TaN electrode

IEEE Electron Device Letters

Volumn 24, Issue 5, 2003, Pages 304-305

  Pan, James ^a   Woo, Christy ^a   Yang, Chih Yuh ^a   Bhandary, Umesh ^b   Guggilla, Srinivas ^b   Krishna, Nety ^b   Chung, Hua ^b   Hui, Angela ^a   Yu, Bin ^a   Xiang, Qi ^a   Lin, Ming Ren ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b APPLIED MATERIALS INC   (United States)

Author keywords

ALD; Cu; Damascene; Metal gate; NMOSFETs; Replacement; Tantalum

Indexed keywords

COPPER; ELECTRIC CONDUCTIVITY; ELECTRIC RESISTANCE; ELECTRODES; GATES (TRANSISTOR); MOSFET DEVICES; TANTALUM COMPOUNDS; VAPOR DEPOSITION;

ATOMIC LAYER DEPOSITION; DAMASCENE; REPLACEMENT METAL-GATE NMOSFETS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0042173106     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.812574     Document Type: Article

References (6)

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