Metal Oxide Semiconductor Field Effect Transistor Characteristics with Iridium Gate Electrode on Atomic Layer Deposited ZrO2 High-k Dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 5010-5013

  Youm, Minsoo ^a,b   Sim, Hyun Sang ^a,c   Jeon, Hyeongtag ^c   Kim, Seong Il ^a   Kim, Yong Tae ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

^c Hanyang University   (South Korea)

Author keywords

Atomic layer deposition; High k dielectrics; Interfacial reaction; Ir electrode; MOSFET; ZrO2

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; ELECTRODES; GATES (TRANSISTOR); IRIDIUM; OXYGEN; ZIRCONIA;

INTERFACIAL REACTIONS;

MESFET DEVICES;

EID: 0142075848     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5010     Document Type: Article

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