Impact of thermal stability on the characteristics of complementary metal oxide semiconductor transistors with TiN metal gate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 2 A, 2002, Pages 546-551

  Wang, Meng Fan ^a,b   Huang, Tiao Yuan ^a   Kao, Ya Chen ^a   Lin, Horng Chih ^a   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Agglomeration; Leakage; Metal gate; MOSFET

Indexed keywords

AGGLOMERATION; CMOS INTEGRATED CIRCUITS; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

METAL GATES;

MOSFET DEVICES;

EID: 0036478537     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.546     Document Type: Article

References (14)