Molybdenum gate work function engineering for ultra-thin-body silicon-on-insulator (UTB SOI) MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 1979-1982

  Ha, Daewon ^a   Ranade, Pushkar ^b   Choi, Yang Kyu ^a   Lee, Jeong Soo ^a   King, Tsu Jae ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Berkeley   (United States)

Author keywords

Metal (molybdenum) gate technology; Nitrogen implantation; Threshold voltage adjustment; UTB SOI CMOSFET; Work function engineering

Indexed keywords

ELECTRIC RESISTANCE; ION IMPLANTATION; MOLYBDENUM; NITROGEN; SILICON ON INSULATOR TECHNOLOGY; THERMOOXIDATION; THRESHOLD VOLTAGE; ULTRATHIN FILMS;

DOPANT FLUCTUATION EFFECTS; IMPURITY SCATTERING; MOLYBDENUM GATE WORK FUNCTION; QUANTUM CONFINEMENT;

MOSFET DEVICES;

EID: 0038348079     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1979     Document Type: Article

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