Evaluation of candidate metals for dual-metal gate CMOS with HfO2 gate dielectric

Materials Research Society Symposium - Proceedings

Volumn 716, Issue , 2002, Pages 85-90

  Samavedam, S B ^a   Schaeffer, J K ^a   Gilmer, D C ^a   Dhandapani, V ^a   Tobin, P J ^a   Mogab, J ^a   Nguyen, B Y ^a   Dakshina Murthy, S ^c   Rai, R S ^a   Jiang, Z X ^a   Martin, R ^a   Raymond, M V ^a   Zavala, M ^a   La, L B ^a   Smith, J A ^a   Gregory, R B ^b  

^a MOTOROLA INC   (United States)

^b MOTOROLA INC   (United States)

^c ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CHARACTERIZATION; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC RESISTANCE; ELECTRODES; HAFNIUM COMPOUNDS; METALS; OXIDES; PERMITTIVITY; POLYSILICON; THERMODYNAMIC STABILITY;

CONDUCTION BAND; EQUIVALENT OXIDE THICKNESS; GATE DIELECTRIC; HAFNIUM OXIDES; VALENCE;

GATES (TRANSISTOR);

EID: 0036950649     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-716-b2.5     Document Type: Conference Paper

References (6)

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