High power In0.49Ga0.51P/In0.15Ga0.85As heterostructure doped-channel FETs

IEICE Transactions on Electronics

Volumn E84-C, Issue 10, 2001, Pages 1312-1317

  Chiu, Hsien Chin ^a   Yang, Shih Cheng ^a   Chan, Yi Jen ^a   Lin, Hao Hsiung ^b  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

DCFET; InGaP; Performance; Power; RIE

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; HETEROJUNCTIONS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; REACTIVE ION ETCHING; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

DOPED-CHANNEL FIELD EFFECT TRANSISTORS; INDIUM GALLIUM PHOSPHIDE;

FIELD EFFECT TRANSISTORS;

EID: 0035483049     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. 2.9 V operation GaAs power MESFET with 31.5 dBm output power and 64% power-added efficiency
2. 3 V operation L-band power double-doped heterojunction FETs
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5. Pseudomorphic N-InGaP/InGaAs/GaAs grown by MOVPE for HEMT LSIs
6. 1-xAs alloys
7. GaInP/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures
8. Low damage and selective gate recess RIE etching of InAlAs/InGaAs HEMT using fluorine and chlorine gas mixtures
9. Nonlinear source and drain resistance in recess-gate heterostructure field-effect transistors
10. 0.5P HEMT's for high-efficiency low-voltage power amplifiers: Deign, fabrication, and device results
11. E-PHEMT for single supply, no drain switch, and high efficiency cellular telephone power amplifier
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13. A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply