Transient pulsed analysis on GaN HEMTs at cryogenic temperatures

IEEE Electron Device Letters

Volumn 26, Issue 10, 2005, Pages 710-712

  Lin, Ching Hui ^a   Wang, Wen Kai ^a   Lin, Po Chen ^a   Lin, Cheng Kuo ^b   Chang, Yu Jung ^a   Chan, Yi Jen ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b WIN SEMICONDUCTORS CORP   (Taiwan)

Author keywords

Cryogenic temperatures; GaN high electron mobility transistors (HEMTs); Kink effect; Pulsed mode measurement

Indexed keywords

CRYOGENICS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; IONIZATION; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; TRANSIENTS;

CRYOGENIC TEMPERATURES; KINK EFFECTS; PULSED MODE MEASUREMENT; TRANSIENT PULSED ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 27144514465     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.856709     Document Type: Article

References (8)

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