메뉴 건너뛰기




Volumn 310, Issue 7-9, 2008, Pages 1961-1965

Characteristics of high dielectric cubic Gd2O3 thin films deposited on cubic LaAlO3 by pulsed laser deposition

Author keywords

A1. Reflection high energy electron diffraction; A1. X ray diffraction; A3. Laser epitaxy; B1. Gadolinium compounds

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GADOLINIUM COMPOUNDS; LANTHANUM COMPOUNDS; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

EID: 41449106680     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.221     Document Type: Article
Times cited : (9)

References (15)
  • 1
    • 41449108241 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors, Semiconductor India Association, 2006.
    • The International Technology Roadmap for Semiconductors, Semiconductor India Association, 2006.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.