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Volumn 21, Issue 2, 2000, Pages 60-62

Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET's

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; HETEROJUNCTIONS; INTEGRATED CIRCUIT MANUFACTURE; LITHOGRAPHY; MICROWAVE INTEGRATED CIRCUITS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

EID: 0034140607     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.821667     Document Type: Article
Times cited : (17)

References (8)
  • 1
    • 0027307622 scopus 로고
    • 3 V operation L-band power double-doped heterojunction FET's
    • N. Iwata, K. Inosako, and M. Kuzuhara, "3 V operation L-band power double-doped heterojunction FET's," in IEEE MTT-S Dig., 1993, pp. 1465-1468.
    • (1993) IEEE MTT-S Dig. , pp. 1465-1468
    • Iwata, N.1    Inosako, K.2    Kuzuhara, M.3
  • 2
    • 0028463257 scopus 로고
    • Highly efficient double-doped hetero-junction FET's for battery-operated portable power applications
    • K. Inosako, K. Matsunaga, Y. Okamoto, and M. Kuzuhara, "Highly efficient double-doped hetero-junction FET's for battery-operated portable power applications," IEEE Electron Device Lett., vol. 15, pp. 248-251, 1994.
    • (1994) IEEE Electron Device Lett. , vol.15 , pp. 248-251
    • Inosako, K.1    Matsunaga, K.2    Okamoto, Y.3    Kuzuhara, M.4
  • 3
    • 0028499868 scopus 로고
    • 2.9 V operation GaAs power MESFET with 31.5 dBm output power and 64% power-added efficiency
    • J. L. Lee et al., "2.9 V operation GaAs power MESFET with 31.5 dBm output power and 64% power-added efficiency," IEEE Electron Device Lett., vol. 15, pp. 324-326, 1994.
    • (1994) IEEE Electron Device Lett. , vol.15 , pp. 324-326
    • Lee, J.L.1
  • 4
    • 0030150086 scopus 로고    scopus 로고
    • 5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band application
    • Y. L. Lai et al., "5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band application," IEEE Electron Device Lett., vol. 17, pp. 229-231, 1996.
    • (1996) IEEE Electron Device Lett. , vol.17 , pp. 229-231
    • Lai, Y.L.1
  • 5
    • 0032166551 scopus 로고    scopus 로고
    • InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
    • M. Zaknoune et al., "InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage," IEEE Electron Device Lett., vol. 19, pp. 345-347, 1998.
    • (1998) IEEE Electron Device Lett. , vol.19 , pp. 345-347
    • Zaknoune, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.