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Volumn 21, Issue 2, 2000, Pages 60-62
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Microwave power performance comparison between single and dual doped-channel design in AlGaAs/InGaAs HFET's
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Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER CONCENTRATION;
CURRENT DENSITY;
HETEROJUNCTIONS;
INTEGRATED CIRCUIT MANUFACTURE;
LITHOGRAPHY;
MICROWAVE INTEGRATED CIRCUITS;
MOLECULAR BEAM EPITAXY;
OHMIC CONTACTS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING INDIUM GALLIUM ARSENIDE;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
ALUMINUM GALLIUM ARSENIDE;
HALL MOBILITY;
MICROWAVE POWER PERFORMANCE;
POWER DENSITY;
FIELD EFFECT TRANSISTORS;
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EID: 0034140607
PISSN: 07413106
EISSN: None
Source Type: Journal
DOI: 10.1109/55.821667 Document Type: Article |
Times cited : (17)
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References (8)
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