0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO2 and Si substrate

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 1861-1864

  Ogawa, A ^a   Iwamoto, K ^a   Ota, H ^b   Morita, Y ^b   Ikeda, M ^a   Nabatame, T ^a   Toriumi, A ^b,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

HfO2; HfSiOx interfacial layer; High k dielectrics; Si substrate; Solid phase reaction

Indexed keywords

FILM GROWTH; HAFNIUM COMPOUNDS; PERMITTIVITY; REACTION KINETICS; SILICON; ULTRATHIN FILMS;

GATE STACKS; INTERFACIAL LAYERS; SOLID PHASE REACTIONS;

GATES (TRANSISTOR);

EID: 34248676591     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.005     Document Type: Article

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