Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation

Solid-State Electronics

Volumn 53, Issue 3, 2009, Pages 355-358

  Sen, Banani ^a   Wong, Hei ^a   Yang, B L ^a   Chu, P K ^a   Kakushima, K ^b   Iwai, H ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Lanthanum oxide; Nitrogen; Oxide traps; Plasma immersion ion implantation

Indexed keywords

ELECTRIC PROPERTIES; ION BOMBARDMENT; ION IMPLANTATION; LANTHANUM; LANTHANUM ALLOYS; NITROGEN; OXIDE FILMS; PLASMA APPLICATIONS; PLASMAS;

CAPACITANCE-VOLTAGE MEASUREMENTS; CURRENT VOLTAGES; E-BEAM EVAPORATIONS; ELECTRICAL PROPERTIES; LANTHANA; LANTHANUM OXIDE; NITROGEN ATOMS; NITROGEN IMPLANTATIONS; NITROGEN INCORPORATIONS; OXIDE TRAPS; PLASMA IMMERSION ION IMPLANTATION; PLASMA IMMERSIONS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 61349134727     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.01.009     Document Type: Article

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