Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Microelectronics Reliability

Volumn 48, Issue 11-12, 2008, Pages 1769-1771

  Ahmet, Parhat ^a   Nakagawa, Kentaro ^a   Kakushima, Kuniyuki ^a   Nohira, Hiroshi ^b   Tsutsui, Kazuo ^a   Sugii, Nobuyuki ^a   Hattori, Takeo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b TOKYO CITY UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARGE COUPLED DEVICES; ELECTRON BEAM LITHOGRAPHY; ELECTRON MULTIPLIERS; GATE DIELECTRICS; GATES (TRANSISTOR); HEAT TREATMENT; LANTHANUM; LOGIC GATES; METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; PHOTODEGRADATION; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICATES; SILICON COMPOUNDS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM ALLOYS;

ANNEALING TEMPERATURES; EFFECTIVE MOBILITIES; ELECTRICAL CHARACTERISTICS; ELECTRICAL MEASUREMENTS; GATE INSULATORS; GATE STACKS; METAL OXIDE FIELD EFFECT TRANSISTORS; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; MOS FETS; SILICATE LAYERS; SINGLE LAYERS; THERMAL TREATMENTS; X-RAY PHOTOELECTRON SPECTROSCOPIES;

FIELD EFFECT TRANSISTORS;

EID: 55649117306     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2008.09.004     Document Type: Article

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