Characterization of Pt/Bi3.15Nd0.85Ti 3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors

Journal of Applied Physics

Volumn 106, Issue 11, 2009, Pages

  Xie, Dan ^a   Luo, Yafeng ^a   Han, Xueguang ^a   Ren, Tianling ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FATIGUE TESTS; FERROELECTRIC MEMORY TRANSISTORS; GATE FIELD; HAFNIUM OXIDES; MEMORY WINDOW; METAL FERROELECTRIC INSULATOR SEMICONDUCTORS; MFIS STRUCTURE; MICROSTRUCTURAL ANALYSIS; OPERATION VOLTAGE; PEROVSKITE FILMS; SI SUBSTRATES; STRUCTURAL AND ELECTRICAL PROPERTIES; SWITCHING CYCLES;

BUFFER LAYERS; ELECTRIC PROPERTIES; FATIGUE TESTING; FERROELECTRIC MATERIALS; FERROELECTRICITY; HAFNIUM; HAFNIUM COMPOUNDS; NEODYMIUM; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; WINDOWS;

FIELD EFFECT TRANSISTORS;

EID: 72449197025     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3267153     Document Type: Article

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