Characteristics of SrBi2Ta2O9 ferroelectric films on GaAs with a TiO2 buffer layer

Applied Physics A: Materials Science and Processing

Volumn 76, Issue 2, 2003, Pages 197-199

  Liu, X H ^a,b   Liu, Z G ^a   Wang, Y P ^a   Zhu, T ^a   Liu, J M ^a  

^a NANJING UNIVERSITY   (China)

^b DATA STORAGE INSTITUTE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; FERROELECTRIC MATERIALS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS; TITANIUM DIOXIDE;

BUFFER LAYERS;

STRONTIUM COMPOUNDS;

EID: 0037290785     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390201417     Document Type: Article

References (18)

1. J.L. Moll, Y. Tarui: IEEE Trans. Electron Devices 10, 338 (1963).
2. M. Ishida, S. Tsuji, K. Kimura, H. Matsunami, T. Taraka: J. Cryst. Growth 45, 393 (1978).
3. H. Nagata, M. Yoshimoto, H. Koinuma: J. Cryst. Growth 118, 299 (1992).
4. P. Tiwari, S. Sharan, J. Narayan: Appl. Phys. Lett. 59, 357 (1991).
5. K. Nashimoto, D.K. Fork, T.H. Geballe: Appl. Phys. Lett. 60, 1199 (1992).
6. Y. Higuma, Y. Matsui, M. Okuyama, T. Nakagawa, Y. Hamakawa: Jpn. J. Appl. Phys. 17, 209 (1977).
7. H.N. Lee, Y.T. Kim, Y.K. Park: Appl. Phys. Lett. 74, 3887 (1999).
8. T. Hayashi, M. Yoshihara, S. Ohmi, E. Tokumitsu, H. Ishiwara: Appl. Surf. Sci. 117/118, 418 (1997).
9. S. Otsubo, T. Maeda, T. Minamikawa, Y. Yonezawa, A. Morimoto, T. Shimizu: Jpn. J. Appl. Phys. 29, L133 (1990).
10. H. Kidoh, T. Ogawa, A. Morimoto, T. Shimizu: Appl. Phys. Lett. 58, 2910 (1991).
11. Q.D. Jiang, Z.J. Huang, P. Jin, C.L. Chen, A. Brazdeikis, Y.Y. Sun, H.H. Feng, A. Benneker, C.W. Chu: Surf. Sci. Lett. 405, L554 (1998).
12. J.H. Cho, S.H. Bang, Y.J. Son, Q.X. Jia: Appl. Phys. Lett. 72, 665 (1998).
13. K. Nashimoto, D.K. Fork, F.A. Ponce, J.C. Tramontana: Jpn. J. Appl. Phys. 32, 4099 (1993).
14. W.-J. Lee, C.-H. Shin, C.-R. Cho, J.-S. Lyn, B.-W. Kim, B.-G. Yu, K.-I. Cho: Jpn. J. Appl. Phys. 38, 2039 (1999).
15. Y.T. Kim, D.S. Shin: Appl. Phys. Lett. 71, 3507 (1997).
16. M. Noda, H. Sugiyama, M. Okuyama: Jpn. J. Appl. Phys. 38, 5432 (1999).
17. J.-P. Han, T.P. Ma: Appl. Phys. Lett. 72, 1185 (1998).
18. S.L. Miller, P.J. McWhorter: J. Appl. Phys. 72, 5999 (1992).