Relevance of the pulsed capacitance-voltage measurement technique for the optimization of SrBi2Ta2O9/high-k stack combination to be used in FeFET devices

Microelectronic Engineering

Volumn 83, Issue 11-12, 2006, Pages 2564-2569

  Xu, Z ^a,b   Goux, L ^a   Kaczer, B ^a   Vander Meeren, H ^a   Wouters, D J ^a   Groeseneken, G ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

C(V) measurement; FeFET; High k; MFIS; SBT

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS;

FEFET; HIGH-K STACK COMBINATIONS; METAL ORGANIC DECOMPOSITION (MOD); MFIS; SRBI2TA2O9 (SBT);

FERROELECTRIC DEVICES;

EID: 33751237983     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.07.001     Document Type: Article

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