Properties of neodymium-doped Bi4Ti3O12 thin films for ferroelectric random access memory

Integrated Ferroelectrics

Volumn 84, Issue 1, 2006, Pages 67-73

  Xie, Dan ^a   Zhang, Zhigang ^a   Ren, Tianling ^a   Liu, Tianzhi ^a   Dong, Yaqi ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Fatigue; Ferroelectric properties; Microstructure; Neodymium doped Bi4Ti3O12

Indexed keywords

EID: 52349092747     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580601085230     Document Type: Conference Paper

References (15)

1. J. F. Scott and C. A. Araujo, Science 246, 1400 (1989).
2. O. Auciello, J. F. Scott, and R. Ramesh, Phys. Today 51, 7, 22 (1998).
3. A. Kingon, Nature (London) 401, 658 (1999).
4. H. N. Al-Shareef, K. R. Bellur, A. I. Kingon, and O. Auciello, Appl. Phys. Lett. 66, 239 (1995).
5. K. B. Lee, S. Tirumala, and S. B. Desu, Appl. Phys. Lett. 74, 1484 (1999).
6. S. R. Shannigrahi and H. M. Jang, Appl. Phys. Lett. 79, 1051 (2001).
7. C. A. Araujo, J. D. Cuhairo, L. D. McMillan, M. C. Scott, and J. F. Scott, Nature (London) 374, 627 (1995).
8. B. H. Park et al., Natufe (London) 401, 682 (1999).
9. U. Chon, G.-C. Yi, and H. M. Jang, Appl. Phys. Lett. 78, 658 (2001).
10. Li T, Zhu Y, Desu SB, Peng CH, Nagata M, Appl Phys Lett. 68, 616 (1996).
11. U. Chon, H. M. Jang, S.-H. Lee, and G.-C. Yi, J. Mater. Res. 16, 3124 (2001).
12. U. Chon, H. M. Jang, M. G. Kim, and C. H. Chang, Physical Review Letters 89(8): 087601-1 (2002).
13. S. T. Zhang, X. J. Zhang, H. W. Cheng, Y. F. Chen, Z. G. Liu, N. B. Ming, X. B. Hu, and J. Y. Wang, Applied Physics Letters 83(21): 4378 (2003).
14. T. Hayashi, N. Iizawa, D. Togawa, M. Yamada, W. Sakamoto, and S. Hirano, Jpn. J. Appl. Phys. 42: 1660 (2003).
15. J. H. Li, Y. Qiao, X. L. Liu, C. J. Nie, C. J. Lu, Z. X. Xu, S. M. Wang, N. X. Zhang, D. Xie, H. C. Yu, and J. Q. Li, Applied Physics Letters 85(15): 3193 (2004).