Interface studies and electronic properties of silicon based nd-doped bismuth titanate

Integrated Ferroelectrics

Volumn 98, Issue 1, 2008, Pages 90-96

  Zang, Yongyuan ^a   Xie, Dan ^a   Xiao, Yehui ^a   Ruan, Yong ^a   Ren, Tianling ^a   Liu, Litian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

BNdT; FeFET; Ferroelectric; Metal ferroelectric insulator semiconductor; Sol gel

Indexed keywords

BISMUTH TITANATE; BNDT; FEFET; FERROELECTRIC; FERROELECTRIC POLARIZATION; INTERFACIAL PROPERTY; MEMORY EFFECTS; MEMORY WINDOW; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR; METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURES; ND-DOPED; SI SUBSTRATES; SI(1 0 0); SILICON-BASED;

BISMUTH; BUFFER LAYERS; CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; ELECTRONIC PROPERTIES; EPITAXIAL LAYERS; FERROELECTRICITY; GELATION; GELS; HAFNIUM COMPOUNDS; OPTICAL WAVEGUIDES; OXIDE MINERALS; PEROVSKITE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON; SILICON OXIDES; SOL-GEL PROCESS; SOL-GELS; SOLS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65949105918     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802092423     Document Type: Article

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