The effect of reduced gate leakage on improved retention time of metal-ferroelectric (pbzr0.53ti0.47o3)-insulator (zro2)-semiconductor capacitors

Integrated Ferroelectrics

Volumn 98, Issue 1, 2008, Pages 113-120

  Shih, Wen Chieh ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

FeFET; Gate leakage current; PZT; Surface treatment; ZrO2

Indexed keywords

COMPOSITE DIELECTRICS; FEFET; GATE LEAKAGE CURRENT; GATE LEAKAGES; INTERFACE STATE; INTERFACIAL LAYER; PBZR0.53TI0.47O3; PRE-TREATMENT; PZT; RETENTION TIME; SEMICONDUCTOR CAPACITORS; ZRO2;

CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; FERROELECTRICITY; LEAD; LEAKAGE CURRENTS; MOS CAPACITORS; PIEZOELECTRIC ACTUATORS; PIEZOELECTRIC MATERIALS; PIEZOELECTRIC TRANSDUCERS; SEMICONDUCTING LEAD COMPOUNDS; ZIRCONIUM ALLOYS;

SURFACE TREATMENT;

EID: 65949087214     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580802092506     Document Type: Article

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