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Volumn , Issue , 2008, Pages
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Electron mobility in multiple silicon nanowires GAA nMOSFETs on (110) and (100) SOI at room and low temperature
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Author keywords
[No Author keywords available]
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Indexed keywords
DOUBLE PEAKS;
GATE-ALL-AROUND;
LOW TEMPERATURES;
MOBILITY CHARACTERISTICS;
MOBILITY DEGRADATIONS;
N-MOSFETS;
PHYSICAL MECHANISMS;
SI NANOWIRES;
SILICON NANOWIRES;
SURFACE ROUGHNESS SCATTERINGS;
ELECTRIC BREAKDOWN;
ELECTRIC WIRE;
ELECTRON DEVICES;
ELECTRON MOBILITY;
ELECTRONS;
GALLIUM ALLOYS;
SURFACE CHEMISTRY;
SURFACE ROUGHNESS;
NANOWIRES;
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EID: 64549133311
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2008.4796807 Document Type: Conference Paper |
Times cited : (9)
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References (8)
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