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Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

Scanning capacitance microscopy studies of unintentional doping in epitaxial lateral overgrowth GaN

(4) Sumner, J a Oliver, R A a Kappers, M J a Humphreys, C J a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE LAYER; CROSS SECTION; EPITAXIAL LATERAL OVERGROWTH; EPITAXIAL LATERAL OVERGROWTH-GAN; GAN/SAPPHIRE; INCORPORATION RATES; MAGNESIUM PRECURSORS; N-TYPE DOPANTS; N-TYPE DOPING; NONUNIFORMITY; P-TYPE DOPING; SCANNING CAPACITANCE MICROSCOPY; SPATIAL DISTRIBUTION; THREE-DIMENSIONAL GROWTH; UNINTENTIONAL DOPING;

CAPACITANCE; DOPING (ADDITIVES); EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MAGNESIUM; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SIZE DISTRIBUTION; THREE DIMENSIONAL;

COALESCENCE;

EID: 71749121607 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3259379 Document Type: Article

Times cited : (18)

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