Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 32-36

  Hemmingsson, C ^a   Paskov, P P ^a   Pozina, G ^b   Heuken, M ^c   Schineller, B ^c   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Norstel AB   (Sweden)

^c AIXTRON AG   (Germany)

Author keywords

A1. Crystal morphology; A1. Impurities; A2. Growth from vapour; A3. Hydride vapour phase epitaxi; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; GALLIUM NITRIDE; HYDRIDES; MORPHOLOGY; OPTICAL MICROSCOPY; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS;

CRYSTAL MORPHOLOGY; GROWTH FROM VAPOR; HYDRIDE VAPOUR PHASE EPITAXY (HVPE); SEMICONDUCTING III-V MATERIALS;

VAPOR PHASE EPITAXY;

EID: 33847298931     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.223     Document Type: Article

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