Practical issues in carrier-contrast imaging of GaN structures

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2576-2580

  Sumner, J ^a   Oliver, R A ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONTRAST IMAGING; ELECTRON-BEAM; IDENTICAL CONDITIONS; IMAGING CONDITIONS; MULTI-LAYERED; NITRIDE SEMICONDUCTORS; NOISE RATIOS; PRACTICAL ISSUES; SAMPLE PREPARATION TECHNIQUES; SCANNING CAPACITANCE MICROSCOPY; SCANNING ELECTRON MICROSCOPE; SCANNING SPREADING RESISTANCE MICROSCOPY; SECONDARY ELECTRON EMISSIONS; SEM IMAGING;

ANNEALING; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ELECTRON EMISSION; ELECTRON OPTICS; GALLIUM ALLOYS; GALLIUM NITRIDE; METAL RECOVERY; NITRIDES; PARTICLE BEAMS; PHOTORESISTS; SCANNING; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SURFACE ROUGHNESS;

IMAGING TECHNIQUES;

EID: 41549124270     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674725     Document Type: Conference Paper

References (6)

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