Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

Applied Physics Letters

Volumn 90, Issue 9, 2007, Pages

  Lee, W ^a   Ryou, J H ^a   Yoo, D ^a   Limb, J ^a   Dupuis, R D ^a   Hanser, D ^b   Preble, E ^b   Williams, N M ^b   Evans, K ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL STRUCTURES; INTERFACE CHARGE DISTRIBUTION; TRANSISTOR STRUCTURES;

CARRIER MOBILITY; EPITAXIAL LAYERS; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; IRON; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING;

GALLIUM NITRIDE;

EID: 33847629878     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2535899     Document Type: Article

References (9)

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