Unintentional doping in GaN assessed by scanning capacitance microscopy

Physica Status Solidi (B) Basic Research

Volumn 245, Issue 5, 2008, Pages 896-898

  Sumner, J ^a   Das Bakshi, S ^a   Oliver, R A ^a   Kappers, M J ^a   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 47749143016     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200778567     Document Type: Conference Paper

References (7)

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3. R. A. Oliver, M. J. Kappers, J. Sumner, R. Datta, and C. J. Humphreys, J. Cryst. Growth 289, 506 (2006).
4. J. Sumner, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, phys. stat. sol. (c) 4(7), 2576 (2007).
5. I. Horcas et al., Rev. Sci. Instrum. 78, 013705 (2007).
6. G. Popovici, H. Morkoç, and S. Noor Mohammid, in: Group III Nitride Semiconductor Compounds: Physics and Applications, edited by B. Gil (Clarendon, Oxford, 1998).
7. J. Sumner, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, Springer Proceedings in Physics (2007), in press.