Characterization of HfO2 and hafnium silicate films on SiO 2/Si

AIP Conference Proceedings

Volumn 1173, Issue , 2009, Pages 55-61

  Bersch, E ^a   Di, M ^a   Consiglio, S ^b   Clark, R D ^b   Leusink, G J ^b   Diebold, A C ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b TEL TECHNOLOGY CENTER   (United States)

Author keywords

ARXPS; Band gap; Band offsets; Depth profile; Hafnium silicate; HfO2; Spectroscopic ellipsometry; XPS

Indexed keywords

EID: 70450255308     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.3251260     Document Type: Conference Paper

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