Effect of nitrogen on electrical and physical properties of polyatomic layer chemical vapor deposition HfSixQy gate dielectrics

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 11 B, 2004, Pages 7815-7820

  Punchaipetch, Prakaipetch ^a   Okamoto, Takeshi ^a   Nakamura, Hideki ^a   Uraoka, Yukiharu ^a   Fuyuki, Takashi ^a   Horii, Sadayoshi ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

Hf silicate; High k gate oxides; Nitride Hf silicate; Polyatomic layer chemical vapor deposition method

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); HAFNIUM COMPOUNDS; NITRIDING; NITROGEN; OXIDATION; SILICA; THERMODYNAMIC STABILITY; X RAY PHOTOELECTRON SPECTROSCOPY;

BAND GAP; HF SILICATE; HIGH-K GATE OXIDES; NITRIDE HF SILICATE; POLYATOMIC LAYER CHEMICAL VAPOR DEPOSITION METHOD;

DIELECTRIC MATERIALS;

EID: 12844269838     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7815     Document Type: Conference Paper

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