Development of a high rate 4H-SiC epitaxial growth technique achieving large-area uniformity

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 111-114

  Ito, M ^a   Storasta, L ^a   Tsuchida, H ^a  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

Author keywords

4H SiC; Epitaxial growth; High growth rate; Impurities; Large area uniformity

Indexed keywords

CARRIER LIFETIME; EPILAYERS; GROWTH RATE; IMPURITIES; MORPHOLOGY; SILICON CARBIDE; SURFACE MORPHOLOGY;

4H-SIC; DLTS MEASUREMENTS; FREE-EXCITON PEAK; HIGH GROWTH RATE; INTRINSIC DEFECTS; LARGE AREA UNIFORMITY; THICKNESS UNIFORMITY; TRAP CONCENTRATION;

EPITAXIAL GROWTH;

EID: 63849260387     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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