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Volumn 600-603, Issue , 2009, Pages 135-138
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Theoretical monte carlo study of the formation and evolution of defects in the homoepitaxial growth of SiC
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Author keywords
Atomic force microscopy; Computer simulation; Defects; Growth models; Surface structures
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
COMPUTER SIMULATION;
CRYSTAL ATOMIC STRUCTURE;
DEFECTS;
MONTE CARLO METHODS;
SILICON CARBIDE;
SURFACE STRUCTURE;
ANALYTICAL RESULTS;
DEFECT FORMATION;
DIFFERENT SUBSTRATES;
FORMATION AND EVOLUTIONS;
GROWTH MODELS;
HOMOEPITAXIAL GROWTH;
KINETIC MODELING;
OPTICAL CHARACTERIZATION;
GROWTH RATE;
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EID: 63849219866
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Conference Paper |
Times cited : (18)
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References (9)
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