Arsenic doped zinc oxide

Journal of Applied Physics

Volumn 103, Issue 12, 2008, Pages

  Volbers, N ^a   Lautenschlager S ^a   Leichtweiss, T ^a   Laufer, A ^a   Graubner, S ^a   Meyer, B K ^a   Potzger, K ^b   Zhou, Shengqiang ^b  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; ION BEAM ASSISTED DEPOSITION; ION BOMBARDMENT; ION IMPLANTATION; MASS SPECTROMETRY; METALLIZING; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NONMETALS; OXIDES; PHOTOELECTRON SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SPECTRUM ANALYSIS; THICK FILMS; VAPORS; ZINC; ZINC OXIDE; ZINC SULFIDE;

(MO Y) DOPING; AMERICAN INSTITUTE OF PHYSICS (AIP); BONDING STATES; CHEMICAL VAPORS; CRYSTAL DAMAGE; DIFFUSION OF IMPURITIES; GROWTH PARAMETERS; IMPLANTED SAMPLES; SECONDARY IONS; SECONDARY PHASES; X RAY PHOTOELECTRON SPECTROSCOPY (XPS);

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 46449120088     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917403     Document Type: Article

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