Field effect diode for effective CDM ESD protection in 45 nm SOI technology

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 594-601

  Cao, Shuqing ^a   Beebe, Stephen G ^b   Salman, Akram A ^c   Pelella, Mario M ^d   Chun, Jung Hoon ^e   Dutton, Robert W ^a  

^a Stanford University   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c TEXAS INSTRUMENTS   (United States)

^d Tau Metrix Inc   (United States)

^e Sungkyunkwan University   (South Korea)

Author keywords

Charged device model (CDM); Electrostatic discharge (ESD); Field effect diode (FED); Local clamping; Semiconductor reliability; Silicon controlled rectifier (SCR); Silicon on Insulator (SOI); Transient effect

Indexed keywords

CHARGED DEVICE MODEL (CDM); ELECTROSTATIC DISCHARGE (ESD); FIELD-EFFECT DIODE (FED); LOCAL CLAMPING; SEMICONDUCTOR RELIABILITY; SILICON-CONTROLLED RECTIFIER (SCR); SILICON-ON-INSULATOR (SOI); TRANSIENT EFFECT;

CONTINUUM DAMAGE MECHANICS; DIODES; ELECTRIC RECTIFIERS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; FIELD EMISSION DISPLAYS; INTEGRATED CIRCUITS; MICROSENSORS; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SIMULATORS; THYRISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 70449397290     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173316     Document Type: Conference Paper

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