Double-well field effect diode vs. SCR behavior under CDM stress in 45nm SOI technology

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2008, Pages 143-144

  Salman, Akram A ^a   Cao, Shuqing ^b   Beebe, Stephen G ^a   Pelella, Mario M ^a   Dutton, Robert W ^b  

^a ADVANCED MICRO DEVICES   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 57749209155     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2008.4656335     Document Type: Conference Paper

References (5)

1. S. Voldman et al., Int. SOI conf.199,
2. O. Marichat et al., EOS/ESD Symp. 2005,
3. A. Salman et al., Proc EOS/ESD Symp., pp. 185-191, 2007,
4. S. Narasimha et al., Proc. IEDM, 2006,
5. CDM TLP tester Barth 4012 User Manual 1.0.