Evaluation of ESD characteristics for 65 nm SOI technology

Proceedings - IEEE International SOI Conference

Volumn 2005, Issue , 2005, Pages 21-23

  Mitra, S ^a   Putnam, C ^a   Gauthier, R ^a   Halbach, R ^a   Seguin, C ^a   Salman, A ^b  

^a IBM MICROELECTRONICS   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33744772272     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2005.1563520     Document Type: Conference Paper

References (6)

1. E. Leobandung, et al, Symposium on VLSI Technology and Circuits, 2005.
2. C. Putnam, et al, IEEE Intl. SOI Conference Proceedings, 2004.
3. T. Maloney and N. Khurana, EOS/ESD Symposium, 1985.
4. E. Grund and R. Gauthier, EOS/ESD Symposium, 2003.
5. E. Grund and R. Gauthier, EOS/ESD Symposium, 2004.
6. K. Chatty, et al, IEEE Intl. Rel. Physics Symposium, 2005.