Design and Optimization of the SOI Field Effect Diode (FED)

2007 International Semiconductor Device Research Symposium, ISDRS

Volumn , Issue , 2007, Pages

  Yang, Yang ^a   Salman, Akram A ^b   Ioannou, Dimitris E ^a   Beebe, Stephen G ^b  

^a GEORGE MASON UNIVERSITY   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 44949191992     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2007.4422443     Document Type: Conference Paper

References (4)

1. A. A. Salman, et al., "Field Effect Diode (FED): A novel device for ESD protection in deep sub-micron SOI technologies", IEDMTech. Dig, 2006.
2. K. J. Yang, et al., "Optimization of Nanoscale Thyristors on SOI for high-performance high-density Memories", SOI Conf, pp.113-114, 2006
3. S.M. Sze, Physics of Semiconductor Devices, 2nd Ed, Wiley, 1981.
4. James Di Sarro, et al., "Study of design factors affecting turn-on-time of Silicon controlled rectifier (SCRS) in 90 and 65nm bulk CMOS technologies", Proc. IRPS, pp. 163-168, 2006.