High-speed digital family using field effect diode

Electronics Letters

Volumn 39, Issue 4, 2003, Pages 345-347

  Sheikhian, I ^a   Raissi, F ^a  

^a K N TOOSI UNIVERSITY OF TECHNOLOGY   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; NAND CIRCUITS; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

FIELD EFFECT DIODES (FED);

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 0037456427     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030251     Document Type: Article

References (3)

1. COLINGE, J.P., GAO, M.H., ROMANO-RODERIGUEZ, A., MAES, H., and CLAEYS, C.: 'Silicon-on-insulator 'gate-all-around device', IEEE IEDM 1990, 1990, pp. 595-598
2. RAISSI, F., and NORDMAN, J.E.: 'Josephson fluxonic diode', Appl. Phys. Lett, 1994, 65, (14), pp. 1838-1840
3. RAISSI, F.: 'A brief analysis of the field effect diode and breakdown transistor', IEEE Trans. Electron Device, 1996, 43, (2)