Sub-meV photoluminescence linewidth and > 106 cm 2/Vs electron mobility in AlGaAsGaAs quantum wells grown by metalorganic vapor phase epitaxy on slightly misoriented substrates

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Pelucchi, E ^a   Moret, N ^a   Dwir, B ^a   Oberli, D Y ^a   Rudra, A ^a   Gogneau, N ^a   Kumar, A ^a   Kapon, E ^a   Levy, E ^b   Palevski, A ^b  

^a EPFL   (Switzerland)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL GROWTH; IMPURITIES; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; TRANSPORT PROPERTIES;

GROWTH TEMPERATURES; LOW TEMPERATURE PHOTOLUMINESCENCE; MISORIENTATION; SUBSTRATE TEMPERATURE;

ALUMINUM ALLOYS;

EID: 33646895712     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195370     Document Type: Article

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