Interface characterization in III-V CMOS nanoelectronics

ECS Transactions

Volumn 11, Issue 4, 2007, Pages 117-122

  Goncharova, L V ^a   Celik, O ^a   Gustafsson, T ^a   Garfunkel, E ^a   Warusawithana, M ^b   Schlom, D G ^b   Wen, H ^c   Santos, M B ^c   Sayan, Safak ^d   Tsai, Wilman ^d   Goel, Niti ^d  

^a RUTGERS UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF OKLAHOMA   (United States)

^d INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GALLIUM ALLOYS; GALLIUM COMPOUNDS; HIGH-K DIELECTRIC; INDIUM ALLOYS; LOGIC GATES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS;

DEFECT CONCENTRATIONS; DIFFUSION PROCESS; HIGH-K GATE STACKS; INTERFACE CHARACTERIZATION; LOW CONCENTRATIONS; METAL GATE MATERIALS; SULFUR PASSIVATION; TRANSISTOR STRUCTURE;

DIELECTRIC MATERIALS;

EID: 45249088756     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2779553     Document Type: Conference Paper

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