Nanoscale defect generation in CMP of Low- k /copper interconnect patterns

Journal of the Electrochemical Society

Volumn 156, Issue 12, 2009, Pages

  Choi, Joo Hoon ^a   Korach, Chad S ^a  

^a Stony Brook University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABRASIVE POLISHING; CONTACT MODELING; COPPER INTERCONNECTS; CRITICAL LOAD; DIAMOND TIP; FEATURE SIZES; FILM PROPERTIES; FRICTION COEFFICIENTS; LATERAL DEFORMATION; LATERAL SURFACE; LINE DENSITY; LOW K DIELECTRICS; MECHANICAL MECHANISMS; NANO-SCALE DAMAGE; NANOSCALE DEFECTS; NANOSCRATCHING; NORMAL LOADS; PARTICLE PRESSURE; PROCESSING CONDITION; SURFACE FEATURE; SYNERGISTIC EFFECT;

ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; DEFORMATION; FRICTION; NANOSTRUCTURED MATERIALS; OPTICAL INTERCONNECTS; POLISHING; SURFACES;

CHEMICAL POLISHING;

EID: 70350702582     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3243852     Document Type: Article

References (52)

1. A. Brown, IEEE Spectrum 0018-9235, 42, 40 (2005).
2. K. A. Perry, Dig. Tech. Pap.-Symp. VLSI Technol. 0743-1562, 1998, 2.
3. M. McCoy, Chem. Eng. News 0009-2347, 83, 20 (2005).
4. A. A. Volinsky, J. B. Vella, and W. W. Gerberich, Thin Solid Films 0040-6090, 429, 201 (2003). 10.1016/S0040-6090(03)00406-1
5. T. Hara, in Proceedings of the 19th International VLSI Multilevel Interconnection Conference, IMIC Publishers, p. 161 (2002).
6. S. Wang, G. Grover, C. Baker, J. Chamberlain, and C. Yu, Solid State Technol. 0038-111X, 44, S9 (2001).
7. S. Kondo, S. Tokitoh, B. U. Yoon, A. Namiki, A. Sone, N. Ohashi, K. Misawa, S. Sone, H. J. Shin, T. Yoshie, in Proceedings of the International Interconnect Technology Conference (IITC), IEEE, pp. 86-88 (2003).
8. T. Scherban, B. Sun, J. Blaine, C. Block, B. Jin, and E. Andideh, in Proceedings of the International Interconnect Technology Conference (IITC), IEEE, pp. 257-259 (2001).
9. P. Leduc, M. Savoye, S. Maitrejean, D. Scevola, V. Jousseaume, and G. Passemard, in Proceedings of the International Interconnect Technology Conference (IITC), IEEE, pp. 209-211 (2005).
10. X. T. Chen, Y. T. Tan, Y. W. Chen, C. Y. Li, S. Balakumar, K. Chew, and P. D. Foo, in Proceedings of the 19th International VLSI Multilevel Interconnection Conference, IMIC Publishers, p. 156 (2002).
11. T. Hara, M. Uchica, M. Fuimoto, T. K. Doy, S. Balakumar, and N. Babu, Electrochem. Solid-State Lett. 1099-0062, 7, G28 (2004). 10.1149/1.1635092
12. A. K. Sikder, P. Zantye, S. Thagella, A. Kumar, B. M. Vinogradov, and N. V. Gitis, in Proceedings of the Eighth International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, IMIC Publishers, p. 120 (2003).
13. N. Endo, S. Kondo, S. Tokitou, B. U. Yoon, N. Ohashi, S. Sone, H. J. Shin, I. Matsumoto, and N. Kobayashi, in Proceedings of the Eighth International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, IMIC Publishers, p. 101 (2003).
14. K. Sikder, S. Thagella, A. Kumar, and J. Yota, J. Mater. Res. 0884-2914, 19, 996 (2004). 10.1557/JMR.2004.0130
15. E. Busch and S. Hosali, Solid State Technol. 0038-111X, 48, 46 (2005).
16. S. Balakumar, X. T. Chen, Y. W. Chen, T. Selvaraj, B. F. Lin, R. Kumar, T. Hara, M. Fujimoto, and Y. Shimura, Thin Solid Films 0040-6090, 462-463, 161 (2004). 10.1016/j.tsf.2004.05.090
17. P. Leduc, T. Farjot, M. Savoye, A. -C. Demas, S. Maitrejean, and G. Passemard, Microelectron. Eng. 0167-9317, 83, 2072 (2006). 10.1016/j.mee.2006. 09.009 (Pubitemid 44792780)
18. C. Yuan, W. D. van Driel, R. van Silfhout, O. van der Sluis, R. A. B. Engelen, L. J. Ernst, F. van Keulen, and G. Q. Zhang, Microelectron. Reliab. 0026-2714, 46, 1679 (2006). 10.1016/j.microrel.2006.07.054 (Pubitemid 44294701)
19. J. Vlassak, J. Mech. Phys. Solids 0022-5096, 52, 847 (2004). 10.1016/j.jmps.2003.07.007
20. J. Bai, Y. W. Zhao, and Y. G. Wang, Appl. Surf. Sci. 0169-4332, 253, 8489 (2007). 10.1016/j.apsusc.2007.04.027 (Pubitemid 47384888)
21. G. Fu, A. Chandra, S. Guha, and G. Subhash, IEEE Trans. Semicond. Manuf. 0894-6507, 14, 406 (2001). 10.1109/66.964328
22. J. Luo and D. A. Dornfeld, IEEE Trans. Semicond. Manuf. 0894-6507, 14, 112 (2001). 10.1109/66.920723 (Pubitemid 32490672)
23. S. Thagella, A. K. Sikder, and A. Kumar, J. Electrochem. Soc. 0013-4651, 151, G205 (2004). 10.1149/1.1643746
24. K. Qin, B. Moudgil, and C. -W. Park, Thin Solid Films 0040-6090, 446, 277 (2004). 10.1016/j.tsf.2003.09.060
25. W. Che, Y. Guo, A. Chandra, and A. -F. Bastawros, J. Manuf. Sci. Eng. 1087-1357, 127, 545 (2005). 10.1115/1.1949616 (Pubitemid 41288181)
26. A. Chandra, P. Karra, A. F. Bastawros, R. Biswas, P. J. Sherman, S. Armini, and D. A. Luca, CIRP Ann. 0007-8506, 57, 559 (2008). 10.1016/j.cirp.2008.03.130
27. W. A. Ducker, T. J. Senden, and R. M. Pashley, Nature (London) 0028-0836, 353, 239 (1991). 10.1038/353239a0
28. X. Y. Lin, F. Creuzet, and H. Arribart, J. Phys. Chem. 0022-3654, 97, 7272 (1993). 10.1021/j100130a025
29. I. Sokolov, Q. K. Ong, H. Shodiev, N. Chechik, D. James, and M. Oliver, J. Colloid Interface Sci. 0021-9797, 300, 475 (2006). 10.1016/j.jcis.2006.04.023 (Pubitemid 44036877)
30. E. Taran, B. C. Donose, I. U. Vakarelski, and K. Higashitani, J. Colloid Interface Sci. 0021-9797, 297, 199 (2006). 10.1016/j.jcis.2005.10.038
31. G. B. Basim, I. U. Vakarelski, and B. M. Moudgil, J. Colloid Interface Sci. 0021-9797, 263, 506 (2003). 10.1016/S0021-9797(03)00201-7 (Pubitemid 36794170)
32. W. Che, Y. Guo, A. Chandra, and A. F. Bastawros, J. Manuf. Sci. Eng. 1087-1357, 125, 731 (2003). 10.1115/1.1619964
33. J. Ye, N. Kojima, K. Ueoka, J. Shimanuki, T. Nasuno, and S. Ogawa, J. Appl. Phys. 0021-8979, 95, 3704 (2004). 10.1063/1.1664025
34. F. Stevens, S. C. Langford, and J. T. Dickinson, J. Appl. Phys. 0021-8979, 99, 023529 (2006). 10.1063/1.2166646 (Pubitemid 43172386)
35. D. Devecchio, P. Schmutz, and G. S. Frankel, Electrochem. Solid-State Lett. 1099-0062, 3, 90 (2000). 10.1149/1.1390967 (Pubitemid 30564693)
36. N. Saka, T. Eusner, and J. -H. Chun. CIRP Ann. 0007-8506, 57, 341 (2008). 10.1016/j.cirp.2008.03.098
37. J. L. Hutter and J. Bechhoefer, Rev. Sci. Instrum. 0034-6748, 64, 1868 (1993). 10.1063/1.1143970
38. R. W. Stark, T. Drobek, and W. M. Heckl, Ultramicroscopy 0304-3991, 86, 207 (2001). 10.1016/S0304-3991(00)00077-2 (Pubitemid 32098271)
39. J. M. Neumeister and W. A. Ducker, Rev. Sci. Instrum. 0034-6748, 65, 2527 (1994). 10.1063/1.1144646
40. J. E. Sader, Rev. Sci. Instrum. 0034-6748, 66, 4583 (1995). 10.1063/1.1145292
41. G. M. Hamilton and L. E. Goodman, J. Appl. Mech. 0021-8936, 88, 371 (1966).
42. G. M. Hamilton, Proc. Inst. Mech. Eng., Part C: Mech. Eng. Sci. 0263-7154, 197, 53 (1983). 10.1243/PIME-PROC-1983-197-076-02
43. K. L. Johnson, Contact Mechanics, Cambridge University Press, New York (1987).
44. J. A. Williams, Engineering Tribology, Cambridge University Press, New York (2005).
45. D. Bozkaya and S. Müftü, Paper IJTC2008-71122 presented at the Proceedings of the STLE/ASME International Joint Tribology Conference (2008).
46. D. B. Bogy, J. Appl. Mech. 0021-8936, 35, 460 (1968).
47. D. B. Bogy, J. Appl. Mech. 0021-8936, 38, 377 (1971).
48. H. Liang, J. -M. Martin, and R. Lee, J. Electron. Mater. 0361-5235, 30, 391 (2001). 10.1007/s11664-001-0049-4
49. S. -H. Chiu, Y. -L. Wang, C. -P. Liu, S. -C. Chang, G. -J. Hwang, M. -S. Feng, and C. -F. Chen, Thin Solid Films 0040-6090, 498, 60 (2006). 10.1016/j.tsf.2005.07.063 (Pubitemid 43113125)
50. G. Xu, H. Liang, J. Zhao, and Y. Li, J. Electrochem. Soc. 0013-4651, 151, G688 (2004). 10.1149/1.1787497
51. P. Bernard, S. Valette, S. Daveau, J. C. Abry, P. Tabary, and Ph. Kapsa, Tribol. Int. 0301-679X, 41, 416 (2008). 10.1016/j.triboint.2007.09.009 (Pubitemid 351162885)
52. T. Kanki, T. Shirasu, S. Takesako, M. Sakamoto, A. A. Asneil, N. Idani, T. Kimura, T. Nakamura, and M. Miyajima, in Proceedings of the IEEE International Interconnect Technology Conference (IITC), IEEE, pp. 79-81 (2008).