First-principles study of oxygen adsorption on the nitrogen-passivated 4H -SiC (0001) silicon face

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 8, 2009, Pages

  Ashman, Christopher R ^a   Pennington, Gary ^b  

^a High Performance Technologies Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70349589421     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.085318     Document Type: Article

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