Effect of Si:C source ratio on SiO2/SiC interface state density for nitrogen doped 4H and 6H-SiC

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Chung, G Y ^a   Tin, C C ^a   Won, J H ^a   Williams, J R ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); OXIDATION; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

INTERFACE TRAP DENSITY;

SILICON CARBIDE;

EID: 18544407212     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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