Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 457-465

  Losurdo, Maria ^a   Giangregorio, Maria M ^a   Capezzuto, Pio ^a   Bruno, Giovanni ^a   Brown, April S ^b   Kim, Tong Ho ^b   Yi, Changhyun ^b  

^a CNR   (Italy)

^b Duke University   (United States)

Author keywords

Hydrogenation; Nitridation; SiC; Surface chemistry

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ENERGY GAP; EPITAXIAL GROWTH; GEOMETRY; HYDROGEN; HYDROGENATION; NITROGEN; PASSIVATION; PLASMA APPLICATIONS; REACTION KINETICS; SURFACE CHEMISTRY; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC HYDROGEN; NITRIDATION; SIC; TEMPERATURE DEPENDENCE;

SILICON CARBIDE;

EID: 18144376311     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0127-0     Document Type: Conference Paper

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