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Applied Surface Science

Volumn 134, Issue 1-4, 1998, Pages 197-201

Formation of nitride layers on 6H-SiC surfaces

(3) Van Eisbergen, V a Rohleder, M a Monch W a

a UNIVERSITY OF DUISBURG ESSEN (Germany)

Author keywords

Nitridation; RF plasma source; Si adlayers; Silicon carbide; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ANNEALING; CRYSTAL ORIENTATION; DEPOSITION; ION EXCHANGE; NITRIDES; NITRIDING; PLASMA SOURCES; SURFACE CLEANING; SURFACE PHENOMENA; THERMAL EFFECTS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ULTRAHIGH VACUUM (UHV) SYSTEMS;

SILICON CARBIDE;

EID: 0032167267 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/s0169-4332(98)00219-0 Document Type: Article

Times cited : (6)

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