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Volumn 600, Issue 18, 2006, Pages 3845-3850

Electronic properties of clean unreconstructed 6H-SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy

Author keywords

Electronic structure; Mott Hubbard metal insulator transition; Photoelectron spectroscopy; Photon induced desorption; Silicon carbide

Indexed keywords

DISPERSIONS; ELECTRONIC PROPERTIES; METAL INSULATOR TRANSITION; PHOTOELECTRON SPECTROSCOPY; SURFACE PROPERTIES; SYNCHROTRON RADIATION;

EID: 33749151147     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.094     Document Type: Article
Times cited : (14)

References (16)
  • 1
    • 31144462673 scopus 로고    scopus 로고
    • Choyke W.J., Matsunami H., and Pensl G. (Eds), Springer
    • Starke U. In: Choyke W.J., Matsunami H., and Pensl G. (Eds). Silicon Carbide Recent Major Advances (2004), Springer 281
    • (2004) Silicon Carbide Recent Major Advances , pp. 281
    • Starke, U.1
  • 11
    • 33749126455 scopus 로고    scopus 로고
    • M. Preuss, F. Bechstedt, unpublished.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.