High-resolution photoemission electron spectroscopy study on the oxynitridation of 6H-SiC(0001)-√3 × √3R30° surface

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 170-175

  Labis, J ^a   Oh, J ^a   Namatame, H ^a   Taniguchi, M ^a   Hirai, M ^b   Kusaka, M ^b   Iwami, M ^b  

^a HIROSHIMA UNIVERSITY   (Japan)

^b OKAYAMA UNIVERSITY   (Japan)

Author keywords

6H SiC; Oxidation; Oxynitridation; Photoemission spectroscopy

Indexed keywords

CHEMICAL BONDS; ELECTRON ENERGY LEVELS; HYDROGEN; MOSFET DEVICES; NITRIDES; NITROGEN OXIDES; OXIDATION; SURFACE PROPERTIES;

6H-SIC; DECONVOLUTION; OXYNITRIDATION; PHOTOEMISSION SPECTROSCOPY;

SILICON CARBIDE;

EID: 4644332265     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.093     Document Type: Conference Paper

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