Suppression of near-edge optical absorption band in sputter deposited hafnium oxynitride via nitrogen incorporation and annealing

Journal of Physics D: Applied Physics

Volumn 42, Issue 14, 2009, Pages

  Yuan, Longyan ^a   Fang, Guojia ^a   Zhou, Hai ^a   Gao, Yihua ^b   Liu, Chang ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED FILMS; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; BAND TRANSITIONS; CRYSTALLIZATION TEMPERATURE; HAFNIUM OXYNITRIDE; NITROGEN FLOW; NITROGEN INCORPORATION; OPTICAL ABSORPTION BANDS; SPECTROPHOTOMETRIC MEASUREMENTS;

HAFNIUM; HAFNIUM COMPOUNDS; NITRIDES; NITROGEN;

ANNEALING;

EID: 70349147058     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/14/145302     Document Type: Article

References (25)

1. Nomura K, Ohta H, Ueda K, Kamiya T, Hirano M and Hosono H 2003 Science 300 1269
2. Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488
3. Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Martins R F P and Pereira L M N 2004 Appl. Phys. Lett. 85 2541
4. Carcia P F, McLean R S and Reilly M H 2006 Appl. Phys. Lett. 88 123509
5. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
6. Liu C L, Jiang Z X, Hegde R I, Sieloff D D, Rai R S, Gilmer D C, Hobbs C C, Tobin P J and Lu S F 2002 Appl. Phys. Lett. 81 1441
7. Nguyen N V, Davydov A V, Chandler-Horowitz D and Frank M M 2005 Appl. Phys. Lett. 87 192903
8. Hoppe E E and Aita C R 2008 Appl. Phys. Lett. 92 141912
9. He G, Fang Q, Li G H, Zhang J P and Zhang L D 2007 Appl. Surf. Sci. 253 8483
10. Iosad N N, Ruis G J, Morks E V, Morpurgo A F, van der Pers N M, Alkemade P F A and Sivel V G M 2004 J. Appl. Phys. 95 8087
11. Sayan S, Emge T, Garfunkel E, Zhao X Y, Wielunski L, Bartynski R A, Vanderbilt D, Suehle J S, Suzer S and Banaszak-Holl M 2004 J. Appl. Phys. 96 7485
12. Liu M, Fang Q, He G, Li L, Zhu L Q, Li G H and Zhang L D 2006 Appl. Phys. Lett. 88 192904
13. Aarik J, Aidla A, Mandar H, Sammelselg V and Uustare T 2000 J. Cryst. Growth 220 105
14. He G, Fang Q, Liu M, Zhu L Q and Zhang L D 2004 J. Cryst. Growth 268 155
15. Mohamed S H, Kappertz O, Niemeier T, Drese R, Wakkad M M and Wuttig M 2004 Thin Solid Films 468 48
16. Mukhopadhyay A B, Sanz J F and Musgrave C B 2006 Phys. Rev. B 73 115330
17. Cullity B D 1978 Elements of X-ray Diffraction 2nd edn (Addison-Wesley: Reading, MA) p 102
18. Tauc J 1974 Amorphous and Liquid Semiconductors (New York: Plenum) chapter 4
19. Kosacki I, Petrovsky V and Anderson H U 1999 Appl. Phys. Lett. 74 341
20. Tang H, Prasad K, Sanjines R, Schmid P E and Levy F 1994 J. Appl. Phys. 75 2042
21. Scopel W L, da Silva A J R, Orellana W and Fazzio A 2004 Appl. Phys. Lett. 84 1492
22. Aarik J, Mandar H, Kirm M and Pung L 2004 Thin Solid Films 466 41
23. Hoppe E E, Sorbello R S and Aita C R 2007 J. Appl. Phys. 101 123534
24. Bazhanov D I, Knizhnik A A, Safonov A A, Bagatur'yants A A, Stoker M W and Korkin A A 2005 J. Appl. Phys. 97 044108
25. Choi J, Puthenkovilakam R and Chang J P 2006 J. Appl. Phys. 99 053705