Structural and optical properties of nitrogen-incorporated HfO 2 gate dielectrics deposited by reactive sputtering

Applied Surface Science

Volumn 253, Issue 20, 2007, Pages 8483-8488

  He, G ^a   Fang, Q ^a,b   Li, G H ^a   Zhang, J P ^a   Zhang, L D ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

HfO 2 thin films; High k gate dielectrics; Interfacial layer; Optical properties; Sputtering

Indexed keywords

CRYSTALLIZATION; ENERGY GAP; HAFNIUM COMPOUNDS; OPTICAL PROPERTIES; REACTIVE SPUTTERING; X RAY DIFFRACTION;

INTERFACIAL LAYERS; NITROGEN INCORPORATION; SPECTROSCOPIC ELLIPSOMETER;

GATE DIELECTRICS;

EID: 34548544353     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2007.04.026     Document Type: Article

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