Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 10, 2009, Pages 1767-1771

  Arefinia, Zahra ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

Band to band tunneling; CNTFET; Double halo; Leakage current

Indexed keywords

AMBIPOLAR BEHAVIOR; AMBIPOLAR CONDUCTION; BAND-TO-BAND TUNNELING; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CNTFET; DOUBLE HALO; DRAIN CONDUCTANCE; DRAIN-INDUCED BARRIER LOWERING; HALO DOPING; NEW STRUCTURES; OFF CURRENT; SCHOTTKY; SIMULATION RESULT; SUBTHRESHOLD SWING; VOLTAGE GAIN;

CARBON NANOTUBES; DRAIN CURRENT; GATES (TRANSISTOR); NANOSENSORS; TUNNELING (EXCAVATION); WIND TUNNELS;

FIELD EFFECT TRANSISTORS;

EID: 70249133993     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2009.06.008     Document Type: Article

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