Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 2, 2008, Pages 196-201

  Arefinia, Zahra ^a   Orouji, Ali A ^a  

^a SEMNAN UNIVERSITY   (Iran)

Author keywords

CNTFET; Non equilibrium Green's function (NEGF); Short channel effects (SCEs); Single halo (SH) implantation

Indexed keywords

CARBON NANOTUBES; DIFFERENTIAL EQUATIONS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; LEAKAGE CURRENTS; MOS DEVICES; MOSFET DEVICES; NANOCOMPOSITES; NANOSENSORS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; POISSON EQUATION; PROBABILITY DENSITY FUNCTION; QUANTUM CHEMISTRY; SEMICONDUCTOR MATERIALS; TRANSISTORS; TWO DIMENSIONAL;

CNTFET; DINGER EQUATIONS; DRAIN CONDUCTANCES; NON-EQUILIBRIUM GREEN'S FUNCTION (NEGF); OFF CURRENTS; QUANTUM SIMULATIONS; SHORT-CHANNEL EFFECTS; SHORT-CHANNEL EFFECTS (SCES); SINGLE HALO (SH) IMPLANTATION; SINGLE HALOS; SOURCE AND DRAIN EXTENSIONS; VOLTAGE GAINS;

GREEN'S FUNCTION;

EID: 55249096662     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.07.003     Document Type: Article

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